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A 1-V 15 μW High-Accuracy Temperature Switch
| Content Provider | Semantic Scholar |
|---|---|
| Author | Schinkel, Daniël Boer, R. P. De Annema, A. J. Tuijl, A. J. M. Van |
| Copyright Year | 2004 |
| Abstract | A CMOS temperature switch with uncalibrated high accuracy is presented. The circuit is based on the classical CMOS bandgap reference structure, using parasitic PNPs and a PTAT multiplier. The circuit was designed in a standard digital 0.18 μm CMOS process. The temperature switch has an in-designed hysteresis of 1.2°C around a threshold value of 128°C. At the switching-threshold all matched transistors have also matched operating conditions, yielding a temperature threshold that is highly independent of transistor output resistance and supply voltage. The chip area was minimized using a novel and generic strategy. With a chip area of only 0.03 mm2, the onwafer 3σ spread of the threshold temperature is 1.1°C. Power consumption is only 15 μA at 1 volt supply. |
| Starting Page | 13 |
| Ending Page | 20 |
| Page Count | 8 |
| File Format | PDF HTM / HTML |
| DOI | 10.1023/B:ALOG.0000038279.08039.a0 |
| Volume Number | 41 |
| Alternate Webpage(s) | http://www.stw.nl/programmas/prorisc/proc-2001/boer_r.pdf |
| Alternate Webpage(s) | https://doi.org/10.1023/B%3AALOG.0000038279.08039.a0 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
