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Method of Removing Smear from Wia Holes Background of the Invention
| Content Provider | Semantic Scholar |
|---|---|
| Copyright Year | 2017 |
| Abstract | An aqueous Solution containing Sulfuric acid and hydrogen peroxide is used for a Soft etchant in a Soft etching Step in a Smear removing process performed prior to a catalyst applying process for chemical copper plating after formation of via holes through an insulating layer of a multi-layer substrate by irradiation of laser. The concentration of Sul furic acid is 1.4 times or less higher than the concentration of hydrogen peroxide. Preferably, the concentration of Sul furic acid is in a range of 5 to 50 g/l, and the concentration of Sulfuric acid is lower than the concentration of hydrogen peroxide. More preferably, the concentration of Sulfuric acid is in a range of 5 to 10 g/l, and the concentration of hydrogen peroxide is in a range of 30 to 35 g/l. As a result, Smear can be certainly removed without excessively etching a conduc tive layer in the Smear removing process. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://patentimages.storage.googleapis.com/5d/af/ff/ab10d807c2fe97/US20030036269A1.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
