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In-Situ Ga 2 O 3 Process for GaAs Inversion / Accumulation Device and Surface Passivation Apptications
| Content Provider | Semantic Scholar |
|---|---|
| Author | Passlack, Matthias Minghwei Mannaerts, Joseph P. Chu, Sung Nee George Opila, Robert Leon Moriya, Netzer Bell, T. Hill, Murray |
| Copyright Year | 2005 |
| Abstract | In-situ deposition of Ga2O3 films on clean, atomically ordered (100) GaAs surfaces has been investigated. Unique Ga2O3-GaAs interface properties including an interface state density in the mid 10'" cm-'eV-' rgnge and an interface recombination velocity of 4500 cm/s have been demonstrated. The formation of inversion layers in both nand p-type GaAs has been clearly established. The Ga2O3-GaAs interface is charactenzed by thermodynamic and photochemical stability. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://www.si-o-net.com/nm_pubs/NM_Publications/TDIEDMp383_1995.PDF |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |