Loading...
Please wait, while we are loading the content...
Visible light from aluminum-porous silicon Schottky junctions
| Content Provider | Semantic Scholar |
|---|---|
| Author | Lazarouk, S. K. Jaguiro, P. Katsouba, S. Monica, Silvia La Maiello, Guido Masini, Gianlorenzo Ferrari, A. C. |
| Copyright Year | 2004 |
| Abstract | The fabrication technologies and the properties of light-emitting devices based on A 1-porous silicon (PS) Schottky junctions have been developed. Bright light emission, visible by the naked eye at normal daylight, is observed at the edge of the electrodes under reverse bias. The electroluminescence (EL) starting voltage is in the range 5-18 V, depending on the doping level of Si substrate. The current level at which the EL starts is around 1 mA for devices of 2.3 X 10 " 3 cm area. The lighi emission intensity increases with increasing current density. EL spectra were broad, covering the whole visible range. The time stability was excellent for all tested devices; the EL intensity did not show remarkable changes, even after more than ten days of continuous light emission at voltages lower than thermal breakdown. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://jaguiro.narod.ru/pavel/cv-publ/tsf96.pdf |
| Language | English |
| Access Restriction | Open |
| Subject Keyword | Aluminum measurement Daylight Device under test Disintegration (morphologic abnormality) Doping (semiconductor) Emission intensity Greater Than Immunoglobulin lambda-Chains P–n junction Schottky barrier Silicon Tomography, Emission-Computed, Single-Photon electrode light emission voltage |
| Content Type | Text |
| Resource Type | Article |
