Laser-interference lithography tailored for highly symmetrically arranged ZnO nanowire arrays.

Content Provider	Semantic Scholar
Author	Kim, Dong Sik Bertram, Frank Scholz, Roland Dadgar, Armin Nielsch, Kornelius Krost, Alois Christen, Juergen Gösele, U. Zacharias, Margit
Copyright Year	2007
Abstract	The controlled growth of one-dimensional semiconductor nanostructures has been the focus of much attention for the last few years, not only in terms of understanding the fundamental growth mechanism but also due to their possible applications in nanoscale electronics and optoelectronics. In particular, nanostructured zinc oxide (ZnO), an important functional oxide semiconductor, has been discussed in terms of a wide variety of applications including lasers, light-emitting devices, sensors, and solar cells. For the realization of such device applications it is necessary to control both the pattern (e.g., diameter, location, and spacing) and the orientation of the ZnO nanostructures. So far, only relatively little attention has been paid to the reproducibility of the process and the quality of the patterned growth of ZnO nanowires (NWs), even though this is an important issue in producing reliable nanoscale devices and systems. A better understanding of the growth processes and the optimization of the growth conditions are thus necessary. In general, the diameter and location of the NWs can be determined by controlling the size and position of the catalytic metal particles. Therefore, an area of ordered metal particles is required for controlled NW growth. Previously, ordered arrays of ZnO NWs were demonstrated successfully by various patterning methods, including conventional electron-beam lithography, scanning probe lithography, nanotemplates, and phase-shifting photolithography, followed by different growth techniques. More detailed descriptions of these fabrication techniques and a discussion of their capabilities and limitations can be found in a recent review article. In this work, we use laser-interference lithography (LIL) to fabricate regularly arranged Au nanodots (NDs) covering areas up to the wafer scale. LIL is a reliable, inexpensive, and fast lithographic tool for the fabrication of large-area dot arrays with tunable lattice constants. Based on this template, we obtain large-area arrays with a long-range order of vertically aligned ZnO NWs by applying a chemical vapor transport and condensation (CVTC) process. Individual ZnO NWs are grown on each Au ND (i.e., one-to-one synthesis). A vapor–solid (VS) mechanism is adapted to describe the growth process instead of the vapor–liquid–solid (VLS) mechanism that is usually considered as the main growth mechanism of ZnO NWs in the presence of Au. Spectrally and spatially resolved cathodoluminescence (CL) measurements are used to study the microscopic spectral emission characteristics of ZnO NW arrays. The fabrication method of ordered NW arrays is illustrated schematically in Figure 1. After obtaining the Au
Starting Page	76
Ending Page	80
Page Count	5
File Format	PDF HTM / HTML
DOI	10.1002/smll.200600307
PubMed reference number	17294473
Journal	Medline
Volume Number	3
Issue Number	1
Alternate Webpage(s)	http://www-old.mpi-halle.mpg.de/mpi/publi/pdf/6808_07.pdf
Alternate Webpage(s)	https://doi.org/10.1002/smll.200600307
Journal	Small
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article