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High performance IGZO/TiO2 thin film transistors using Y2O3 buffer layers on polycarbonate substrate
| Content Provider | Semantic Scholar |
|---|---|
| Author | Hsu, Hsiao Hsuan Chang, C. Y. Cheng, Chun-Hu |
| Copyright Year | 2013 |
| Abstract | In this work, we fabricate IGZO TFT devices on flexible substrate at room temperature. The IGZO/TiO2 TFT has small subthreshold swing of 0.16 V/dec, but suffers large gate leakage and negative threshold voltage. However, the TiO2 TFT with Y2O3 buffer layers shows improved characteristics including a low threshold voltage of 0.55 V, a small sub-threshold swing of 0.175 V/decade and high field-effect mobility of 43 cm2/Vs. Such good performance can be attributed to the enhanced capacitance density and lowered gate leakage owing to the integration of large band gap Y2O3 and low-temperature higher-κ TiO2. |
| Starting Page | 817 |
| Ending Page | 820 |
| Page Count | 4 |
| File Format | PDF HTM / HTML |
| DOI | 10.1007/s00339-013-7680-9 |
| Volume Number | 112 |
| Alternate Webpage(s) | https://ir.nctu.edu.tw/bitstream/11536/22097/1/000322670700002.pdf |
| Alternate Webpage(s) | https://doi.org/10.1007/s00339-013-7680-9 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
