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Analysis and modeling of size dependent mobility enhancement due to mechanical stress
| Content Provider | Semantic Scholar |
|---|---|
| Author | Tanaka, Takuji Goto, Ken-Ichi Nakamura, Ryou Satoh, Shigeo |
| Copyright Year | 2004 |
| Abstract | Abstract We applied a BSIM3v3-like compact model in order to analyze size dependent low field mobility in MOSFETs. By using new extraction procedure, we have successfully extracted gate length dependence of mobility degradation and enhancement due to halo and mechanical stress. The new method is applicable to wide variation of device sizes, structures and materials. |
| Starting Page | 222 |
| Ending Page | 223 |
| Page Count | 2 |
| File Format | PDF HTM / HTML |
| DOI | 10.7567/SSDM.2004.C-4-2 |
| Volume Number | 2004 |
| Alternate Webpage(s) | https://confit.atlas.jp/guide/event-img/ssdm2004/C-4-2/public/pdf_archive?type=in |
| Alternate Webpage(s) | https://doi.org/10.7567/SSDM.2004.C-4-2 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
