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The Influence of process parameters on the electrical behavior of silicon oxide thin films deposited by PECVD-TEOS
| Content Provider | Semantic Scholar |
|---|---|
| Author | Silva, Ana N. R. Da Morimoto, Nilton Itiro |
| Copyright Year | 2001 |
| Abstract | This paper deals with the optimization of silicon oxide deposition process by plasma-enhanced chemical vapor deposition based on TEOS pyrolysis. We focused the analysis on the effect of the oxygen/TEOS ratio during the deposition and on the influence of the rapid thermal annealing process used to densifiy the film at the end of the process. The films were physically analyzed by FTIRS and AFM techniques and electrically characterized through MOS capacitors, fabricated with TEOS silicon oxide. We found that using pure oxygen plasma at the beginning and at the end of the deposition step followed by densification process by rapid thermal annealing improves significantly the electrical behavior of these films. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://lsi.usp.br/~patrick/sbmicro/papers/P225_EUS51E.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
