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Structural , Optical and Magnetic Properties of Cr Doped CdSe Powders Prepared by Solid State Reaction
| Content Provider | Semantic Scholar |
|---|---|
| Author | Sivasankar, J. Mallikarjuna, P. Rao, Nalam Madhusudhana Kaleemulla, Shaik Begam, M. Rigana Venugopalrao, G. |
| Copyright Year | 2017 |
| Abstract | As the key factor to study dilute magnetic semiconductors (DMS) for spintronic applications is the potential to harvest high-quality-single-phase dilute magnetic semiconductors. In this paper, we report the room temperature ferromagnetism (RTFM) in Cr doped CdSe powders synthesized through solid state reaction. The structural, optical and magnetic properties of Cd1-xCrxSe (x= 0.00, 0.04 and 0.08) powders at room temperature has been investigated. X-ray diffraction (XRD) studies confirmed the chromium (Cr) incorporation into the CdSe crystal lattice without disturbing the hexagonal (wurtzite) structure. The lattice parameters are found to be increased with increased Cr concentration in CdSe lattice. The band gap of Cd1-xCrxSe powders has been found to be red shifted as compared to pure CdSe. Magnetic hysteresis (M-H) loops at room temperature reveal the persistence of ferromagnetism in Cd1-xCrxSe powders. The saturation magnetization values increased with increase of ‘x’ in Cd1-xCrxSe. The observed RTFM might due to carrier mediated exchange interactions present in the system. Introduction. The novel combination of material properties such as room temperature ferromagnetism and semiconducting behavior has spawned interest in spin current injection for storage devices. Dilute magnetic semiconductors (DMS) are traditional semiconductors in which magnetic transition metal impurities with partially filled ‘d’ statesand lanthanide series elements with partially filled ‘f’ shell electrons replace cations of the host semiconducting materials. DMS are assumed to be potential resources for practical spintronic based devices [1-3]. It is an exciting field of research wherein both the charge and spin are used for transportation, storage and processing of information in a single spintronic device [4].Room temperature ferromagnetism (RTFM) is an essential property for DMS materials. In order to acquire RTFM in DMS materials, transition metal (Fe, Ni, Co, Mn, Cr) has been doped in different semiconductors such as ZnO [5], GaN [5], TiO2 [6], CdS [7], CdSe [8] and SnO2 [9]. II-VI and III-V DMS offer unique combination of structural, electronic and magnetic properties, which strongly depends on the nature and concentration of the dopant. The transition metals find greater solubility in II–VI compound semiconductors, when compared with III-VI semiconductors[10] .Till date extensive reports are available on nitride, oxide and chalcogenide DMS with different theories and mechanisms explaining the interactions such as double exchange, super-exchange and RKKY type in both the theoretical and experimental aspects with conflicting results on room temperature ferromagnetism. Yet, the origin of observed magnetism in DMSs is still a topic of debate[11, 12]. Apart from this, various reasons for the observed magnetism 44 © 2017 The Authors. Published by Magnolithe GmbH. This is an open access article under the CC BY-NC-ND license http://creativecommons.org/licenses/by-nc-nd/4.0/ |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://mmse.xyz/Papers/vol-9-2017/ID2017030204.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
