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Near-field photoluminescence imaging of single defects in a ZnSe quantum-well structure at low temperatures
| Content Provider | Semantic Scholar |
|---|---|
| Author | Freymann, Georg Von Lueerssen, Dietrich Rabenstein, Carola Richter, Heiko Kalt, Heinz Hommel, Detlef |
| Copyright Year | 1999 |
| Abstract | Single bright-spot, bow-tie-shaped defects in a ZnSe heterostructure are spectroscopically imaged with 200 nm spatial resolution at a sample temperature of 20 K. The local thickness variations in the single ZnSe quantum-well lead to a lateral double-well potential resulting in a shift and enhancement of the quantum-well photoluminescence. The luminescence images of the ZnMgSSe barrier material are governed by nonradiative recombination at the four associated Frank partial dislocations. ©2000 American Institute of Physics. @S0003-6951~00!01702-2# |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://publikationen.bibliothek.kit.edu/5962000/734312 |
| Language | English |
| Access Restriction | Open |
| Subject Keyword | Cold Temperature Dislocations Double-well potential Heterojunction Lateral thinking Quantum well Receptors, TIE Thickness (graph theory) luminescence |
| Content Type | Text |
| Resource Type | Article |