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Electrical Characteristics of X-ray Irradiated on Pn Diode
| Content Provider | Semantic Scholar |
|---|---|
| Author | Sundarasaradula, Yuwadee Srithanachai, Itsara Ueamanapong, Surada Narì‡n Atiwongsaengthong Poyai, A. Niemcharoen, Surasak Titiroongruang, Wisut |
| Copyright Year | 2011 |
| Abstract | The effect of X-ray irradiation on pn diode has been studied by current-voltage (I-V) characterization at room temperature. The diodes have been subjected to the X-ray irradiation at various energies (40, 55, 70keV) and exposure time 205 second. After irradiation the forward current increased is caused by the decrease of the series resistance from metal-semiconductor interface or bulk resistance of the semiconductor. The leakage current of diodes that were exposed with 40 and 55 keV slightly changes, while leakage current of diodes that were exposed with 70 keV decreased, which is cause by a increase of the carrier generation lifetime. Therefore, X-ray irradiation improved the electrical properties in forward bias and reverse bias on pn diode. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://phoenix.eng.psu.ac.th/pec9/icet/paper/ee/P56.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |