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Effect of Al evaporation temperature on the properties of Al films grown on sapphire substrates by molecular beam epitaxy
| Content Provider | Semantic Scholar |
|---|---|
| Author | Wang, Wenliang Yang, Weijia Liu, Zhan Wei Wang, Haiyan Lin, Yunhao Zhou, Shizhong Lin, Zhiting Qian, Huirong Yang, Meijuan Zhu, Yunnong Liu, Guo Rong Gao, Fangliang Li, Guoqiang |
| Copyright Year | 2015 |
| Abstract | High-quality Al films with an in-plane epitaxial relationship of Al[1−10]//sapphire[1−100] have been epitaxially grown on sapphire substrates by molecular beam epitaxy. The as-grown and ∼200 nm thick Al films prepared at an Al evaporation temperature of 1100 °C were highly crystalline, with a full-width at half-maximum of 180 arcseconds, and had a very smooth surface, with a root mean square roughness of 0.6 nm. There was no interfacial layer between the Al and sapphire. Furthermore, the effect of the Al evaporation temperature on the properties of the as-grown ∼200 nm thick Al films has been studied in detail. This work of achieving high-quality Al films is of great importance for the fabrication of high-performance Al-based devices. |
| Starting Page | 29153 |
| Ending Page | 29158 |
| Page Count | 6 |
| File Format | PDF HTM / HTML |
| DOI | 10.1039/C5RA04088D |
| Alternate Webpage(s) | https://pubs.rsc.org/en/content/getauthorversionpdf/C5RA04088D |
| Alternate Webpage(s) | https://doi.org/10.1039/C5RA04088D |
| Volume Number | 5 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
