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Silver metallization for ULSI circuit interconnect applications
| Content Provider | Semantic Scholar |
|---|---|
| Author | Wild, Straford Alan |
| Copyright Year | 1997 |
| Abstract | Silver Metallization for ULSI Circuit Interconnect Applications Straford Alan Wild Supervising Professor: Anthony Bell As device dimensions continue to shrink into the deep sub-micron regime, the performance and reliability limitations for ultra-large scale integration (ULSI) circuits are increasingly being determined by the interconnect technology. Ag has the potential to provide superior performance and reliability over Al-based interconnect technology. This body of work explored the feasibility of using Ag as an interconnect for deep sub-micron integrated circuits. It was determined that both Ag-based MOS structures fail under bias thermal stress, and the field and temperature dependence of the time to failure were explored. This implied a need for an effective diffusion barrier between Ag and the inter-metal dielectric in order to prevent shorting of adjacent metal lines. Of the diffusion barriers that were studied, Ta gave the best performance. The interaction of Ag with other commonly used metallization materials was considered. It was found that Ag could be incorporated with a Ti, TiW or TiN barrier layer without any negative impact on its properties. However, Al diffused readily into Ag thus affecting the Ag resistivity. Therefore, Ag could not be used in immediate proximity to Al. A model of the Ag resistivity that considered the diffusivity of Al in Ag and the |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://digitalcommons.ohsu.edu/cgi/viewcontent.cgi?article=3670&context=etd |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
