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Multispectral mid-infrared light emitting diodes on a GaAs substrate
| Content Provider | Semantic Scholar |
|---|---|
| Author | Aziz, Mohsin Abdul Xie, Chengzhi Pusino, Vincenzo Khalid, Ata Steer, M. J. Thayne, Iain Cumming, David R. S. |
| Copyright Year | 2017 |
| Abstract | We have designed, simulated, and experimentally demonstrated four-colour mid-infrared (mid-IR) Light Emitting Diodes (LEDs) integrated monolithically into a vertical structure on a semi-insulating GaAs substrate. In order to finely control the peak wavelength of the emitted mid-IR light, quantum well (QW) structures based on AlInSb/InSb/AlInSb are employed. The completed device structure consists of three p-QW-n diodes with different well widths stacked on top of one bulk AlInSb p-i-n diode. The epitaxial layers comprising the device are designed in such a way that one contact layer is shared between two LEDs. The design of the heterostructure realising the multispectral LEDs was aided by numerical modelling, and good agreement is observed between the simulated and experimental results. Electro-Luminescence measurements, carried out at room temperature, confirm that the emission of each LED peaks at a different wavelength. Peak wavelengths of 3.40 μm, 3.50 μm, 3.95 μm, and 4.18 μm are observed in the bulk... |
| Starting Page | 102102 |
| Ending Page | 102102 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| Volume Number | 111 |
| Alternate Webpage(s) | http://eprints.gla.ac.uk/146324/7/146324.pdf |
| Alternate Webpage(s) | https://doi.org/10.1063/1.4986396 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
