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Hysteresis characteristics of hetero-structured devices using two-dimensional materials for memory applications
| Content Provider | Semantic Scholar |
|---|---|
| Author | Lee, Gwan-Hyoung Yu, Young-Jun Lee, Dae-Yeong Lee, Seung Hwan Kim, Philip James Yoo, Won Jong |
| Copyright Year | 2013 |
| Abstract | Recently, various hetero-structured devices using two-dimensional materials have been developed due to its high performances and flexibility. [1]-[3] In this work, the ultrathin memory devices consisting of twodimensional (2D) materials were fabricated by stacking graphene, hexagonal boron nitride (hBN), and molybdenum disulfide (MoS2), demonstrating large memory window and good retention properties as shown in Figure 1. The two different device structures of, graphene/hBN/MoS2 (GBM) and MoS2/hBN/graphene (MBG), where graphene and MoS2 were employed as channel and charge trap layer for GBM and vice versa for MBG, were investigated. Even though both device structures exhibit a large hysteresis, their field effect transistor (FET) characteristics are quite different. The large hysteresis for memory application can be induced by quantum tunneling effect through the thin hBN layer (< 10 nm) and charge trapping in underlying 2D layer. [1],[4] By formation of the potential wells in the underlying MoS2 or graphene layers between SiO2 and hBN dielectrics, the charges can tunnel through ultrathin hBN layer and be effectively trapped or released depending on the applied gate voltages. We observed that these trapped charge can be maintained in potential wells and this induces the significant hysteresis in the current voltage transfer curves of the 2D FETs. These results provide a promising way to fabricate memory devices using 2D materials. References [1] Britnell, L. et al., Science, 335 (2012) 947-950. [2] Georgiou, T. et al. Nat. Nanotech., 8 (2013) 100-103. [3] Yu, W. J. et al. Nat. Materials, (2012) doi: 10.1038/nmat3518. [4] Lee, G. –H. et al. Appl. Phys. Lett., 99, (2011) 243114. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://www.phantomsnet.net/imaginenano/Abstracts2013/Graphene2013_Choi_Min%20Sup_goodcms@skku.edu_Graphene%202013%20(Min%20Sup%20Choi).pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
