NDLI: Controlled epitaxial growth modes of ZnO nanostructures using different substrate crystal planes

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Controlled epitaxial growth modes of ZnO nanostructures using different substrate crystal planes

Content Provider	Semantic Scholar
Author	Joon, Young Yoo, Jinkyoung Doh, Yong-Joo Kang, Suk Hoon Kong, Ki-Jeong Kim, Miyoung Lee, Dong Ryeol Oh, Kyu Hwan Yi, Gyu-Chul
Copyright Year	2009
Abstract	A combined experimental and theoretical investigation has clarified the nanometre-scale vapour-phase epitaxial growth of ZnO nanostructures on different crystal planes of GaN substrates. Under typical growth conditions, ZnO nanorods grow perpendicular to the GaN(0001) plane, but thin flat films form on GaN(101), (100) and (110). High-resolution X-ray diffraction data and transmission electron microscopy confirm the heteroepitaxial relationship between the ZnO nanostructures and GaN substrates. These results are consistent with first-principles theoretical calculations, indicating that the ZnO surface morphologies are mainly influenced by highly anisotropic GaN/ZnO interface energies. As a result of the large surface energy gradients, different ZnO nanostructures grow by preferential heteroepitaxial growth on different facets of regular GaN micropattern arrays. High-resolution transmission electron microscopy shows that ZnO nanotubes develop epitaxially on micropyramid tips, presumably as a result of enhanced nucleation and growth about the edges.
Starting Page	941
Ending Page	947
Page Count	7
File Format	PDF HTM / HTML
DOI	10.1039/B816034A
Volume Number	19
Alternate Webpage(s)	http://engineering.snu.ac.kr/pdf/2009(20)/2009_HYJ_Controlled%20epitaxial%20growth%20modes%20of%20ZnO%20nanostructures%20using%20different%20substrate%20crystal%20planes.pdf
Alternate Webpage(s)	https://doi.org/10.1039/B816034A
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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