Loading...
Please wait, while we are loading the content...
Similar Documents
Characterization of ion-implanted 4H-SiC Schottky barrier diodes
| Content Provider | Semantic Scholar |
|---|---|
| Author | Shou-Guo, Wang Yan, Zhang Yi-Men, Zhang Yu-Ming, Zhang |
| Copyright Year | 2010 |
| Abstract | sample B) into a p-type 4H-SiC epitaxial layer. The implantation depth profiles are calculated by using the Monte Carlo simulator TRIM. The fabrication process and the I–V and C–V characteristics of the lateral Ti/4H-SiC Schottky barrier diodes (SBDs) fabricated on these multiple box-like ion-implantation layers are presented in detail. Measurements of the reverse I–V characteristics demonstrate a low reverse current, which is good enough for many SiC-based devices such as SiC metal–semiconductor field-effect transistors (MESFETs), and SiC static induction transistors (SITs). The parameters of the diodes are extracted from the forward I–V and C–V characteristics. The values of ideality factor n of SBDs for samples A and B are 3.0 and 3.5 respectively, and the values of series resistance Rs are 11.9 and 1.0 kΩ respectively. The values of barrier height ϕB of Ti/4H-SiC are 0.95 and 0.72 eV obtained by the I–V method and 1.14 and 0.93 eV obtained by the C–V method for samples A and B respectively. The activation rates for the implanted nitrogen ions of samples A and B are 2% and 4% respectively extracted from C–V testing results. |
| Starting Page | 017203 |
| Ending Page | 017203 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| DOI | 10.1088/1674-1056/19/1/017203 |
| Volume Number | 19 |
| Alternate Webpage(s) | https://www.xidian.edu.cn/hyjsktz//docs/20110222171933679656.pdf |
| Alternate Webpage(s) | https://doi.org/10.1088/1674-1056%2F19%2F1%2F017203 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
