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在 ( 111 ) 晶面基板上利用區域性應力通道提高電子遷移率之 n 型金氧半場效電晶體 Mobility Enhancement in Local Strained Channel nMOSFETs on ( 111 ) Substrate 研 究 生:郭雅欣 Student :
| Content Provider | Semantic Scholar |
|---|---|
| Author | Chao, A. Kuo, Ya-Hsin |
| Copyright Year | 2005 |
| Abstract | In this thesis, we investigate the local strain channel technique using deposition of SiN layer and stack of a-Si gate structure used in the (111) substrate. The device performance is improved due to the mechanical stress produced by thicker SiN capping layer or a-Si layer. Stack of a-Si gate structure also influences the threshold voltage and sheet resistance of gate because of its poly depletion width. SiN capping layer causes more interface states in oxide / Si interface and serious short channel effect. We also compare the strain effect on (100) and (111) substrate in this thesis. The trends are almost the same except the structure with both a-Si layer and SiN capping layer. Although there are still some challenges, the local strain channel technique used in (111) substrate will be useful to CMOS technology in the future. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://ir.nctu.edu.tw/bitstream/11536/75702/1/150601.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
