Loading...
Please wait, while we are loading the content...
Similar Documents
Reconfigurable Ion Gating of 2H-MoTe2 Field-Effect Transistors Using Poly(ethylene oxide)-CsClO4 Solid Polymer Electrolyte.
| Content Provider | Semantic Scholar |
|---|---|
| Author | Xu, Huilong Fathipour, Sara Kinder, Erich W. Seabaugh, Alan C. Fullerton-Shirey, Susan K. |
| Copyright Year | 2015 |
| Abstract | Transition metal dichalcogenides are relevant for electronic devices owing to their sizable band gaps and absence of dangling bonds on their surfaces. For device development, a controllable method for doping these materials is essential. In this paper, we demonstrate an electrostatic gating method using a solid polymer electrolyte, poly(ethylene oxide) and CsClO4, on exfoliated, multilayer 2H-MoTe2. The electrolyte enables the device to be efficiently reconfigured between n- and p-channel operation with ON/OFF ratios of approximately 5 decades. Sheet carrier densities as high as 1.6 × 10(13) cm(-2) can be achieved because of a large electric double layer capacitance (measured as 4 μF/cm(2)). Further, we show that an in-plane electric field can be used to establish a cation/anion transition region between source and drain, forming a p-n junction in the 2H-MoTe2 channel. This junction is locked in place by decreasing the temperature of the device below the glass transition temperature of the electrolyte. The ideality factor of the p-n junction is 2.3, suggesting that the junction is recombination dominated. |
| File Format | PDF HTM / HTML |
| DOI | 10.1021/nn506521p |
| PubMed reference number | 25877681 |
| Journal | Medline |
| Volume Number | 9 |
| Issue Number | 5 |
| Alternate Webpage(s) | http://www3.nd.edu/~sfullert/HOME_files/2015_ACS_nano_Electrolyte_gate_MoTe2.pdf |
| Alternate Webpage(s) | https://doi.org/10.1021/nn506521p |
| Journal | ACS nano |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
