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A Novel Shallow Trench Isolation with Mini-Spacer Technology
| Content Provider | Semantic Scholar |
|---|---|
| Author | Yeh, Wen-Kuan Lin, Tony Chen, Coming Chou, Jih-Wen Sun, Shin-Wei |
| Copyright Year | 1999 |
| Abstract | A new shallow trench isolation (STI) process with a mini-spacer at the masking nitride sidewall before silicon trench etching was proposed. With this mini-spacer, thicker corner liner oxide and a T-shaped trench oxide can be formed simultaneously. The issue of oxide-recess at STI corner can be effectively reduced and larger process window for subthreshold kink free device were obtained. The isolation capability and junction integrity were both improved as compared with those of the conventional STI process. Reverse narrow width effect as well as gate oxide integrity were also improved. This technology was employed for 0.13 µm complementary metal oxide silicon (CMOS) device fabrication. |
| Starting Page | 2300 |
| Ending Page | 2305 |
| Page Count | 6 |
| File Format | PDF HTM / HTML |
| DOI | 10.1143/JJAP.38.2300 |
| Alternate Webpage(s) | https://confit.atlas.jp/guide/event-img/ssdm1998/LA-2/public/pdf_archive |
| Alternate Webpage(s) | https://doi.org/10.1143/JJAP.38.2300 |
| Volume Number | 38 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
