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Full-Band Particle-Based Analysis of Device Scaling for 3D Tri-Gate FETs
| Content Provider | Semantic Scholar |
|---|---|
| Author | Chiney, Priyanka Branlard, Julien Aboud, Shela Saraniti, Marco Goodnick, Stephen M. |
| Copyright Year | 2004 |
| Abstract | In this work, a 25 nm gate length three-dimensional tri-gate SOI FET with a wrap around gate geometry is studied using a full-band particle-based simulation tool. The tri-gate FETs have shown superior scalability over planar device structures, reduction of short channel effects, higher drive currents and excellent gate-channel controllability compared to their planar counterparts. Simulations were performed by scaling the length and the width of the tri-gate SOI FET channel to study its short-channel and short-width effects. The influence of the scaling on the dynamic response has also been explored by performing a frequency analysis on the device. |
| Starting Page | 45 |
| Ending Page | 49 |
| Page Count | 5 |
| File Format | PDF HTM / HTML |
| DOI | 10.1007/s10825-005-7105-x |
| Volume Number | 4 |
| Alternate Webpage(s) | http://www.iwce.org/fileadmin/IWCE_cache/iwce2004/www.iwce.nanohub.org/papers/optical/S08-07-Chiney.pdf |
| Alternate Webpage(s) | https://doi.org/10.1007/s10825-005-7105-x |
| Journal | 2004 Abstracts 10th International Workshop on Computational Electronics |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
