Loading...
Please wait, while we are loading the content...
Similar Documents
Radical-cation salt with novel BEDT-TTF packing motif containing tris(oxalato)germanate(IV)
| Content Provider | Semantic Scholar |
|---|---|
| Author | Lopez, Jordan R. Akutsu, Hiroki Martin, Lee U. |
| Copyright Year | 2015 |
| Abstract | Abstract The synthesis, crystal structure and resistivity of a new semiconducting BEDT-TTF radical-cation salt containing the tris(oxalato)germanate(IV) anion is reported. BEDT-TTF 4 [Ge(C 2 O 4 ) 3 ].0.5dichloromethane crystallizes in the space group P 2 1 / c, a = 18.322(7), b = 11.919(4), c = 32.746(11) A, β = 105.797(5)°, V = 6881(4) A 3 , T = 295(1) K, Z = 4. Electrical resistivity measurements show that BEDT-TTF 4 [Ge(C 2 O 4 ) 3 ].0.5dichloromethane is a semiconductor with an activation energy of 0.224 eV and room temperature resistivity of 212 Ω cm. |
| Starting Page | 188 |
| Ending Page | 191 |
| Page Count | 4 |
| File Format | PDF HTM / HTML |
| DOI | 10.1016/j.synthmet.2015.07.019 |
| Volume Number | 209 |
| Alternate Webpage(s) | http://irep.ntu.ac.uk/id/eprint/28068/1/PubSub5587_Martin.pdf |
| Alternate Webpage(s) | https://doi.org/10.1016/j.synthmet.2015.07.019 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
