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Effect of Source and Drain Contacts Schottky Barrier on 3C-SiC Nanowire FETs I-V Characteristics
| Content Provider | Semantic Scholar |
|---|---|
| Author | Rogdakis, Konstantinos Lee, Seoung Yong Kim, Dong Joo Lee, Sang Kwon Bano, Edwige Zekentes, Konstantinos |
| Copyright Year | 2009 |
| Abstract | In this work, SiC nanowire (NW) FETs are prepared and their electrical measurements are presented. From the samples fabricated on the same substrate, various I-Vs shapes are obtained (linear, non linear symmetric, and asymmetric). With the assistance of simulation, we show that this is a result of different values of Schottky Barrier Heights (SBH) at Source (S) / Drain (D) contacts of FETs. An origin for this might be a non uniformity in annealing, NW doping level and high interface traps density (that pins the Fermi level) as well as the high sensitivity of the metal-NW contacts to local surface contaminations. |
| Starting Page | 235 |
| Ending Page | 238 |
| Page Count | 4 |
| File Format | PDF HTM / HTML |
| DOI | 10.4028/www.scientific.net/MSF.615-617.235 |
| Volume Number | 615-617 |
| Alternate Webpage(s) | https://www.scientific.net/MSF.615-617.235.pdf |
| Alternate Webpage(s) | https://doi.org/10.4028/www.scientific.net%2FMSF.615-617.235 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
