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Scanning tunneling microscopy investigations of unoccupied surface states in two-dimensional semiconducting bO 3 O 3-Bi / Si ( 111 ) surface †
| Content Provider | Semantic Scholar |
|---|---|
| Author | Gou, Jian Feng Kong, Long-Juan Li, Wen-Bin Sheng, Shao-Xiang Meng, Sheng Cheng, Peng Wu, Kehui Chen, Lan |
| Copyright Year | 2018 |
| Abstract | Two-dimensional surface structures often host a surface state in the bulk gap, which plays a crucial role in the surface electron transport. The diversity of in-gap surface states extends the category of twodimensional systems and gives us more choices in material applications. In this article, we investigated the surface states of b-O3 O3-Bi/Si(111) surface by scanning tunneling microscopy. Two nearly free electron states in the bulk gap of silicon were found in the unoccupied states. Combined with firstprinciples calculations, these two states were verified to be the Bi-contributed surface states and electron-accumulation-induced quantum well states. Due to the spin–orbit coupling of Bi atoms, Bi-contributed surface states exhibit free-electron Rashba splitting. The in-gap surface states with spin splitting can possibly be used for spin polarized electronics applications. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://surface.iphy.ac.cn/sf09/Pdf/c8cp01356j.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
