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Growth of strained GaAs 1- y Sb y and GaAs 1- y - z Sb y N z quantum wells on InP substrates
| Content Provider | Semantic Scholar |
|---|---|
| Author | Huang, J.y.-T. Xu, Dongpo Song, Xueyan Babcock, Susan E. Kuech, Thomas F. Mawst, Luke J. |
| Copyright Year | 2008 |
| Abstract | The metal organic vapor-phase epitaxy (MOVPE) growth conditions and properties of fully strained GaAs1 y zSbyNz/InP multiquantum wells (MQWs) are investigated. Higher Sb incorporation within the strained GaAs1 ySby layers was observed when using a higher Sb/(As+Sb) precursor ratio and higher growth temperature. However, lattice-latching effects and the strain values ultimately limit the maximum amount of Sb incorporated. In GaAs1 y zSbyNz layers, a decrease of AsH3 precursor flux leads to an increase of N and Sb incorporation, whereas an increase of unsymmetrical dimethylhydrazine (U-DMHy) precursor flux leads to an increase of N and a decrease of Sb incorporation. The photoluminescence emission from the GaAs1 y zSbyNz QW is observed to red-shift with decreasing AsH3 and increasing U-DMHy flux. Sb accumulation at the InP to GaAs1 y zSbyNz interface is also observed from secondary ion mass spectroscopy analysis, indicating further optimization of switching sequences is required to improve the compositional uniformity of the QW. r 2007 Elsevier B.V. All rights reserved. PACS: 78.67.De; 78.55.Cr; 81.15.Gh |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://web.statler.wvu.edu/~xueyan.song/Publications/2008-J%20Crystal%20Growth-310-2382.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |