NDLI: Simulação e projeto de indutores integrados em tecnologia cmos para circuitos de radiofrequência

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Simulação e projeto de indutores integrados em tecnologia cmos para circuitos de radiofrequência

Content Provider	Semantic Scholar
Author	Silva, Rodrigo Godinho
Copyright Year	2017
Abstract	This work presents a step-by-step process to determine the applicability of electromagnetic simulations to predict inductor behavior. Three elements were designed, measured, characterized and simulated. These elements are a shielded double-layered, a shieldless double-layered and a shielded single-layered symmetric inductor. The elements are presented, their topology and constructive parameters are described and their differences are discussed. The devices were measured and the data were adapted as necessary. To evaluate the elements performance (as well as the simulation) analysis parameters are established and detailed. The elements’ parameters are compared and discrepancies are highlighted. The performances of these elements are rated according to figures of merit such as equivalent inductance (5.1 nH for the double-layered elements and 5.5 nH for the single-layered), maximum quality factor (11.2 for the shielded double-layered, 12.2 for the shieldless doublelayered, and 10.3 for the single-layered inductors) and self-resonant frequency (6.84 GHz, 6.89 GHz, and 8.3 GHz, respectively). The electromagnetic simulation presents results close to measurement; however, exploring not tested configurations could lead to improvements. In the worst presented case, the maximum quality factor displayed a discrepancy of 15.7%, the self-resonant frequency presented a 2.3% discrepancy, and the low frequency inductance showed a 9.9% difference between simulation and measured data.
File Format	PDF HTM / HTML
Alternate Webpage(s)	https://acervodigital.ufpr.br/bitstream/handle/1884/47913/R%20-%20D%20-%20RODRIGO%20GODINHO%20SILVA.pdf?isAllowed=y&sequence=1
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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