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Terahertz GaAs/AlGaAs- and InGaAs-based bow-tie diodes: Spectral features and applications for imaging
Content Provider | Semantic Scholar |
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Author | Kašalynas, Irmantas Seliuta, Dalius Tamošiūnas, Vincas Macutkevic, Jan Balakauskas, Saulius Valušis, Gintaras Köhler, Klaus Dr. |
Copyright Year | 2009 |
Abstract | Spectral features of broadband bow-tie diodes fabricated of InGaAs layers and modulation doped GaAs/AlGaAs structures are discussed. It is shown that sensitivity of both GaAs/AlGaAs- and InGaAs-based sensors at room temperature weakly depends on frequency in the range 0.01-1.0 THz; the sensitivity is found to be 0.3 V/W and 10 V/W, respectively. The InGaAs bow tie diodes coupled with silicon lenses are demonstrated in terahertz imaging application, their feasibility for real-time THz imaging is considered as well. |
Starting Page | 012077 |
Ending Page | 012077 |
Page Count | 1 |
File Format | PDF HTM / HTML |
DOI | 10.1088/1742-6596/193/1/012077 |
Volume Number | 193 |
Alternate Webpage(s) | http://iopscience.iop.org/article/10.1088/1742-6596/193/1/012077/pdf |
Alternate Webpage(s) | https://doi.org/10.1088/1742-6596%2F193%2F1%2F012077 |
Language | English |
Access Restriction | Open |
Content Type | Text |
Resource Type | Article |