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High Quality Carbon Nanotubes on Conductive Substrates Grown at Low Temperatures
| Content Provider | Semantic Scholar |
|---|---|
| Author | Ahmad, Muhammad Sohail Anguita, José Virgilio Stolojan, Vlad Corless, Tony Chen, Jiangang Carey, J. David Silva, S. R. P. |
| Copyright Year | 2015 |
| Abstract | For carbon nanotubes (CNTs) to be exploited in electronic applications, the growth of high quality material on conductive substrates at low temperatures (<450°C) is required. CNT quality is known to be strongly degraded when growth is conducted on metallic surfaces, particularly at low temperatures using conventional chemical vapor deposition (CVD). Here, the production of high quality vertically-aligned CNTs at low substrate temperatures (350–440°C) on conductive TiN thin film using photo-thermal CVD is demonstrated by confining the energy required for growth to just the catalyst using an array of optical lamps and by optimizing the thickness of the TiN under-layer. The thickness of the TiN plays a crucial role in determining various properties including diameter, material quality, number of shells, and metallicity. The highest structural quality with a visible Raman D- to G-band intensity ratio as low as 0.13 is achieved for 100 nm TiN thickness grown at 420°C; a record low value for low temperature CVD grown CNTs. Electrical measurements of high density CNT arrays show the resistivity to be 1.25 × 10-2 Ω cm representing some of the lowest values reported. Finally, broader aspects of using this approach as a scalable technology for carbon nanomaterial production are also discussed. |
| Starting Page | 4419 |
| Ending Page | 4429 |
| Page Count | 11 |
| File Format | PDF HTM / HTML |
| DOI | 10.1002/adfm.201501214 |
| Volume Number | 25 |
| Alternate Webpage(s) | http://epubs.surrey.ac.uk/807879/1/AFM%20Manuscript%20-%20final%20version.pdf |
| Alternate Webpage(s) | https://doi.org/10.1002/adfm.201501214 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |