Structural, Morphological, Optical and Photoluminescence Properties of Hafnium Oxide Nanoparticles Synthesized by Sol-Gel Method

Content Provider	Semantic Scholar
Author	Mahendran, N. Jeyakumar, S. Johnson Jothibas, M. Muthuvel, A.
Copyright Year	2019
Abstract	Nanostructured materials have a lot of important applications in various fields because of their unique properties. Semiconductor nanoparticles have received much attention because of their special properties in comparison with those of bulk materials [1-3]. In particular, inorganic compound hafnium oxide (HfO2) is an important group II-IV semiconductor with a wide band gap (5.7eV) [4]. Hafnium dioxide is a material with a number of technologically attractive properties such as high melting point (2758 °C), high dielectric constant (≈ 30), high chemical stability and high neutron absorption cross section [5]. It often plays an important role in the continuous down-scaling of integrated circuits since new insulating materials with a high dielectric constant are being researched to replace SiO2 as a gate dielectric. In terms of structural characteristics, hafnium oxide exists in three polymorphic structures, namely monoclinic (m-HfO2) at low temperature, tetragonal (t-HfO2) above 2050 K and cubic (c-HfO2) at around 2803 K. Each structure has different applications. In past years researchers have been fascinated with nanoparticles structure. Materials with their enormous potentials found in different ways of uses for example semiconductor, optics, magnetic data storage, cataStructural, Morphological, Optical and Photoluminescence Properties of Hafnium Oxide Nanoparticles Synthesized by Sol-Gel Method
File Format	PDF HTM / HTML
DOI	10.14233/ajchem.2019.21696
Alternate Webpage(s)	http://www.asianjournalofchemistry.co.in/User/ViewFreeArticle.aspx?ArticleID=31_2_38
Alternate Webpage(s)	https://doi.org/10.14233/ajchem.2019.21696
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article