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Chapter 5 Mobility Enhancement of Polysilicon Thin-Film Transistor using Nanowire Channels by Pattern-dependent Metal-Induced Lateral Crystallization
| Content Provider | Semantic Scholar |
|---|---|
| Copyright Year | 2005 |
| Abstract | A method for enhancing the mobility of the polysilicon thin-film transistor (poly-Si TFT) by pattern-dependent metal-induced-lateral-crystallization (PDMILC) using nanowire channels was demonstrated and characterized. The experimental results indicate that the field-effect mobility of PDMILC TFT was enhanced as the channel width decreased, because the lateral length of its poly-Si grain was increased. The ten nanowire channels (M10) PDMILC poly-Si TFT had the greatest field-effect mobility of 109.34 cmPP/Vs and the smallest subthreshold swing (SS) of 0.23 V/dec at the gate length of 2 um. The field-effect mobility also increased with the decline in the gate length in the M10 PDMILC poly-Si TFT device, because the number of poly-Si grain boundary defects was reduced. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://ir.nctu.edu.tw/bitstream/11536/44423/12/181712.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |