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Influence of a selectively ion-implanted collector on bipolar transistor electrical characteristics
| Content Provider | Semantic Scholar |
|---|---|
| Author | Liang, Minchang Law, Mark E. |
| Copyright Year | 1992 |
| Abstract | With the development of double-polysilicon, self-aligned bipolar technology, the lateral feature size of bipolar transistors has been scaled down. This reduces the parasitic capacitance and resistance, and leads to improved device performance. To get further improvement in device speed, a corresponding scaling of the vertical feature size is necessary. However, progress in vertical scaling is difficult to achieve. As a result of B-channeling during the intrinsic base formation, it is virtually impossible to avoid the undesired spreading of base profile. Worse, the channeling becomes more significant when the implantation energy is low, which means control of the B-ion-implantation becomes even more critical in the fabrication of modern shallowbase, high-speed bipolar transistors. To overcome this difficulty, a new process technology, Selectively ion-implanted collector (SIC), has been proposed[l,2]. During the fabrication of a bipolar transistor, P-ions are implanted into the epi-collector region near the collectorbase junction after the formation of the intrinsic base, and form a high-concentration collector layer. This implantation is self-aligned to the intrinsic base implant, and consequently is localized to the intrinsic base-collector junction. This offers a lower parasitic capacitance than an increase in the epi-doping level. The purpose of this work is to explore the influence of the SIC implantation energy and dose on device performance. The MOSAIC-3[3] process was simulated using SUPREM1II[4] and a SIC step was added. The implantation energy and dose were varied, and the resulting profiles were used as input to PISCES-II[5]. The simulations were of the intrinsic device only and did not include the parasitic resistance and capacitance associated with the base, collector and emitter contacts. |
| Starting Page | 1017 |
| Ending Page | 1018 |
| Page Count | 2 |
| File Format | PDF HTM / HTML |
| DOI | 10.1016/0038-1101(92)90334-9 |
| Volume Number | 35 |
| Alternate Webpage(s) | http://swamp.mse.ufl.edu/articles/1992/Liang_1992_SSE_35_1017.pdf |
| Alternate Webpage(s) | https://doi.org/10.1016/0038-1101%2892%2990334-9 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
