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Highly scaled charge-trapping layer of ZrON nonvolatile memory device with good retention
| Content Provider | Semantic Scholar |
|---|---|
| Author | Tsai, Chang Yu Lee, Tzu-Yang Cheng, Chun-Hu Chin, Albert Wang |
| Copyright Year | 2010 |
| Abstract | We have fabricated the TaN–[SiO2–LaAlO3]–ZrON–[LaAlO3–SiO2]–Si charge-trapping flash device with highly scaled 3.6 nm equivalent-Si3N4-thickness. This device shows large 4.9 V initial memory window, and good retention of 3.4 V ten-year extrapolated retention window at 85 °C, under very fast 100 μs and low ±16 V program/erase. These excellent results were achieved using deep traps formed in ZrON trapping layer by As+ implantation that was significantly better than those of control device without ion implantation. |
| Starting Page | 213504 |
| Ending Page | 213504 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.3522890 |
| Volume Number | 97 |
| Alternate Webpage(s) | https://ir.nctu.edu.tw/bitstream/11536/31918/1/000284618300050.pdf |
| Alternate Webpage(s) | https://www.researchgate.net/profile/Albert_Chin/publication/229433058_Highly_scaled_charge-trapping_layer_of_ZrON_nonvolatile_memory_device_with_good_retention/links/09e41500deb9725d22000000.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
