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Above 700 V superjunction MOSFETs fabricated by deep trench etching and epitaxial growth
| Content Provider | Semantic Scholar |
|---|---|
| Author | Ze-Hong, Li Bo, Zhang Shuai, Zhang Fei, Wang Peng Jian, Chen |
| Copyright Year | 2010 |
| Abstract | Silicon superjunction power MOSFETs were fabricated with deep trench etching and epitaxial growth, based on the process platform of the Shanghai Hua Hong NEC Electronics Company Limited. The breakdown voltages of the fabricated superjunction MOSFETs are above 700 V and agree with the simulation. The dynamic characteristics, especially reverse diode characteristics, are equivalent or even superior to foreign counterparts. |
| Starting Page | 084002 |
| Ending Page | 084002 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| DOI | 10.1088/1674-4926/31/8/084002 |
| Volume Number | 31 |
| Alternate Webpage(s) | http://www.jos.ac.cn//fileBDTXB/oldPDF/10032301.pdf |
| Alternate Webpage(s) | https://doi.org/10.1088/1674-4926%2F31%2F8%2F084002 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |