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Monte Carlo impurity diffusion simulation considering charged species for low thermal budget sub-50 nm CMOS process modeling
| Content Provider | Semantic Scholar |
|---|---|
| Author | Hane, Masami Ikezawa, Takeo Takeuchi, Kunifumi Gilmer, G. H. |
| Copyright Year | 2001 |
| Abstract | A Monte Carlo dopant diffusion simulation program has been developed which includes charged species, Fermi-level effects on drift-diffusion and clustering reactions. An algorithm that determines variable time steps was improved to account for all the Fermi-level dependent quantities, such as different charge states of point-defects, pairs and complexes, and different diffusivities/reaction rates for them. Simulations of two extreme low thermal budget processes, i.e. spike-anneal (>1050/spl deg/C) and low temperature (<550/spl deg/C and long time) anneal for typical sub-50 nm CMOS processes have been demonstrated by using this MC program. |
| Starting Page | 38.4.1 |
| Ending Page | 38.4.4 |
| File Format | PDF HTM / HTML |
| DOI | 10.1007/978-3-7091-6244-6_3 |
| Alternate Webpage(s) | http://in4.iue.tuwien.ac.at/pdfs/sispad2001/pdfs/HaneM_3.pdf |
| Journal | International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
