NDLI: Room-temperature-operated sensitive hybrid gas sensor based on amorphous indium gallium zinc oxide thin-film transistors

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Room-temperature-operated sensitive hybrid gas sensor based on amorphous indium gallium zinc oxide thin-film transistors

Content Provider	Semantic Scholar
Author	Zan, Hsiao-Wen Li, Chang-Hung Yeh, Chun-Cheng Dai, Ming-Zhi Meng, Hsin-Fei Tsai, Chuang-Chuang
Copyright Year	2011
Abstract	An organic sensing layer is capped onto an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) to form a hybrid sensor. The organic layer, served as a second gate, forms a p-n junction with the a-IGZO film. Oxidizing or reducing vapor molecules act like electron acceptors or electron donors to change the potential of the organic layer and the current of a-IGZO TFT. A sensitive and reversible response to 100 ppb ammonia and 100 ppb acetone is obtained at room temperature. This letter opens a route to develop low-cost large-area bio/chemical sensor arrays based on the emerging a-IGZO TFT technology.
Starting Page	253503
Ending Page	253503
Page Count	1
File Format	PDF HTM / HTML
DOI	10.1063/1.3601488
Alternate Webpage(s)	http://web.it.nctu.edu.tw/~polymer/Research/20110908_2_Room-temperature-operated%20.pdf
Alternate Webpage(s)	https://ir.nctu.edu.tw/bitstream/11536/22529/1/000292039900069.pdf
Alternate Webpage(s)	http://web.it.nctu.edu.tw/~polymer/Research/ApplPhysLett_98_Room-temperature-operated%20sensitive%20hybrid%20gas%20sensor.pdf
Alternate Webpage(s)	https://doi.org/10.1063/1.3601488
Volume Number	98
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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