NDLI: Electric field induced surface passivation of Si by atomic layer deposited AI 203 studied by optical second-harmonic generation

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Electric field induced surface passivation of Si by atomic layer deposited AI 203 studied by optical second-harmonic generation

Content Provider	Semantic Scholar
Author	Kessels, Wilhelmus M. M. Gielis, Johan Hoex, Bram Terlinden, N. M. Dingemans, G. Gijs Verlaan, V. Vasco Sanden, M. C. M. Van De
Copyright Year	2010
Abstract	Fig. 1. Schematic representation of the second harmonic generation (SHG) method used to measure the electric field in the space charge region of c-Si as caused by the presence of fixed negative interface charge in the AI203 film. The method, sensitive to electric fields of >10 V/cm , is also referred to as electric field induced second harmonic generation or EFISH. SHG can be considered as the conversion of two photons with energy Iiw into a single photon of energy 2liw , a process that can occur only for high intensity (laser) radiation. field-effect passivation [7,8]. Characterization of the fieldeffect passivation and the fixed charge density in the AI203 films before and even during processing could help to further unravel the passivation mechanism. In this respect, the noninvasive nonlinear optical technique of secondharmonic generation (SHG) is a very promising diagnostic . SHG, as schematically illustrated in Fig. 1, is highly interface sensitive for centrosymmetric media and allows for a contactless detection of internal electric fields, which can either be applied static fields or electric fields in semiconductor space-charge regions arising from interfacial charge separation [9,10].The effect of electric fieldinduced SHG (EFISH) can be described by the secondorder nonlinear polarization p(2)(2m) induced by an incident electric field E(m)
File Format	PDF HTM / HTML
Alternate Webpage(s)	http://alexandria.tue.nl/openaccess/Metis236081.pdf
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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