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Endurance and scaling trends of novel access-devices for multi-layer crosspoint-memory based on mixed-ionic-electronic-conduction (MIEC) materials
| Content Provider | Semantic Scholar |
|---|---|
| Author | Shenoy, R. S. Gopalakrishnan, Ks Jackson, Bryan C. Virwani, Kumar Burr, Geoffrey W. Rettner, Charles T. Padilla, Alvaro Bethune, Donald S. Shelby, Robert M. Kellock, Andrew J. Breitwisch, M. Joseph, Eric A. Dasaka, R. King, Rudith S. Nguyen, Kim Bowers, Alexia N. Jurich, Mark C. Friz, Alexander Topuria, Teya Rice, P. M. Kurdi, Bulent N. |
| Copyright Year | 2011 |
| Abstract | We demonstrate compact integrated arrays of BEOL-friendly novel access devices (AD) based on Cu-containing MIEC materials [1–3]. In addition to the high current densities and large ON/OFF ratios needed for Phase Change Memory (PCM), scaled-down ADs also exhibit larger voltage margin Vm, ultra-low leakage (<10pA), and much higher endurance (>108) at high current densities. Using CMP, all-good 5×10 AD arrays with Vm > 1.1V are demonstrated in a simplified CMOS-compatible diode-in-via (DIV) process. |
| Starting Page | 94 |
| Ending Page | 95 |
| Page Count | 2 |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://researcher.ibm.com/researcher/files/us-gwburr/MIEC_VLSI2011.pdf |
| Alternate Webpage(s) | http://geoffreyburr.org/papers/VLSI2011.pdf |
| Alternate Webpage(s) | http://researcher.watson.ibm.com/researcher/files/us-gwburr/MIEC_VLSI2011.pdf |
| Journal | 2011 Symposium on VLSI Technology - Digest of Technical Papers |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |