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Transistor Width Size Effect on Voltage Drop and Improve Internal Resistance in CMOS Rectifier
| Content Provider | Semantic Scholar |
|---|---|
| Author | Sharma, Himshikha Bihari, Braj |
| Copyright Year | 2016 |
| Abstract | The proposed work based on the simulation studies for the effect of different width size of transistor on output voltage drop and internal resistance in CMOS rectifier. This paper presents the CMOS rectifier by using two PMOS and NMOS configuration and gives information about miniaturization technology. Hence, increase the width size from 4μm to 1100μm of PMOS and NMOS transistors. The results for 1100μm are 1.20V is better than 750μm width size, and also minimize the internal resistance from 6.17Ω to 4.580Ω in CMOS rectifier. The model was designed and simulated using Microwind software and operated at a frequency of 50Hz with an AC voltage source. A circuit was fabricated with 0.35μm CMOS technology. |
| Starting Page | 41 |
| Ending Page | 44 |
| Page Count | 4 |
| File Format | PDF HTM / HTML |
| DOI | 10.5120/ijca2016909440 |
| Volume Number | 139 |
| Alternate Webpage(s) | https://www.ijcaonline.org/archives/volume139/number11/24538-24538-2016909440?format=pdf |
| Alternate Webpage(s) | https://doi.org/10.5120/ijca2016909440 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
