Transparent-conductive-oxide (TCO) buffer layer effect on the resistive switching process in metal/TiO2/TCO/metal assemblies

Content Provider	Semantic Scholar
Author	Filatova, Elena O. Baraban, A. P. Konashuk, A. S. Konyushenko, M. A. Selivanov, A. A. Sokolov, Andrew Schaefers, Franz Drozd, Valentyna
Copyright Year	2014
Abstract	The effect of a transparent conductive oxide (TCO) buffer layer on the insulator matrix and on the resistive switching process in the metal/TiO2/TCO/metal assembly was studied depending on the material of the TCO (ITO(In2O3)0.9(SnO2)0.1 or SnO2 or ZnO). For the first time electro-physical studies and near edge x-ray absorption fine structure (NEXAFS) studies were carried out jointly and at the same point of the sample, providing direct experimental evidence that the switching process strongly influences the lowest unoccupied bands and the local atomic structure of the TiO2 layers. It was established that a TCO layer in a metal/TiO2/TCO/metal assembly is an additional source of oxygen vacancies for the TiO2 film. The RL (RH) states are achieved presumably with the formation (rupture) of the electrically conductive path of oxygen vacancies. Inserting an Al2O3 thin layer between the TiO2 and TCO layers to some extent restricts the processes of migration of the oxygen ions and vacancies, and does not allow the anti-clockwise bipolar resistive switching in a Au/ TiO2/Al2O3/ITO/Au assembly. The greatest value of the ratio RH/RL is observed for the assembly with a SnO2 buffer layer that will provide the maximum set of
Starting Page	113014
Ending Page	113014
Page Count	1
File Format	PDF HTM / HTML
DOI	10.1088/1367-2630/16/11/113014
Volume Number	16
Alternate Webpage(s)	http://www.helmholtz-berlin.de/pubbin/oai_publication?ID=82750&VT=1
Alternate Webpage(s)	https://doi.org/10.1088/1367-2630%2F16%2F11%2F113014
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article