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Sofc Stack Having a High Temperature Bonded Ceramic Interconnect and Method for Making Same Cross Reference to Related Applications
| Content Provider | Semantic Scholar |
|---|---|
| Copyright Year | 2017 |
| Abstract | Correspondence Address: (57) ABSTRACT LARSON NEWMAN ABEL POLANSKY & WHTE LLP The present disclosure is directed to an integrated SOFC 5914 west COURTYARD DRIVE stack including, a first cell having a cathode layer, an SUTE 200 electrolyte layer overlying the cathode layer, and an anode AUSTIN, TX 78730 (US) layer overlying the electrolyte layer. The SOFC stack also includes a second cell having a cathode layer, an electrolyte layer overlying the cathode layer, and an anode overlying the (73) Assignee: SAINT GOBAIN CERAMICS & electrolyte layer. The SOFC stack further includes a ceramic PLASTICS, INC., Worcester, MA (US) interconnect layer between the first cell and the second cell, s s the ceramic interconnect layer having a first high tempera ture bonding region along the interfacial region between the (21) Appl. No.: 11/696,624 first cell and the ceramic interconnect layer. The ceramic interconnect layer also includes a second high temperature bonding region along the interfacial region between the (22) Filed: Apr. 4, 2007 second cell and the ceramic interconnect layer. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://patentimages.storage.googleapis.com/73/3d/5b/b5388bf731f4f5/US20070237999A1.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Patent |