NDLI: Photoluminescence of high optical quality CdSe thin films deposited by close-spaced vacuum sublimation

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Photoluminescence of high optical quality CdSe thin films deposited by close-spaced vacuum sublimation

Content Provider	Semantic Scholar
Author	Gnatenko, Yu. P. Bukivskij, Petro M. Faryna, Ivan O. Opanasyuk, Anatoliy Ivashchenko, M. M.
Copyright Year	2014
Abstract	Polycrystalline CdSe thin films (d¼0.1–3.0 μm) have been deposited on a glass substrate by means of the close-spaced vacuum sublimation technique. X-ray diffraction measurements have shown that the films obtained at Тs4473 K have only wurtzite phase. The influence of deposition conditions, in particular, the substrate temperature on the photoluminescence (PL) of CdSe films spectra was investigated. This let us study the effect of glass substrate on their optical quality as well as determine the nature and energy structure of the intrinsic defects and residual impurities in the films. The presence in PL spectrum of the most intense sharp donor bound exciton D 0 X-line for CdSe films obtained at Ts¼873 K indicates the n-type conductivity and their high optical quality. Intensive PL bands in the spectral range 1.65–1.74 eV were also observed, which are associated with the recombination of donor–acceptor pairs with the participation of the shallow donor and acceptor centers caused by Na(Li) residual impurities. As a result of the study of the PL spectra of CdSe films the optimal temperature conditions of their growth were determined, namely, the substrate temperature Ts¼ 873 K and the evaporator temperature Te¼973 K. & 2013 Elsevier B.V. All rights reserved.
Starting Page	174
Ending Page	177
Page Count	4
File Format	PDF HTM / HTML
DOI	10.1016/j.jlumin.2013.09.070
Volume Number	146
Alternate Webpage(s)	http://essuir.sumdu.edu.ua/bitstream/123456789/33847/3/J_Luminescence_2014.pdf
Alternate Webpage(s)	https://doi.org/10.1016/j.jlumin.2013.09.070
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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