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Investigation of surface potential distributions of phosphorus-doped n-BaSi thin-films by kelvin probe force microscopy
| Content Provider | Semantic Scholar |
|---|---|
| Author | Tsukahara, Daichi Masakazu, Baba Ryota, Takabe Kaoru, Toko Takashi, Suemasu |
| Copyright Year | 2015 |
| Abstract | We investigated the surface potential distributions around grain boundaries (GBs) in phosphorus (P)-doped n-BaSi2 thin-films by Kelvin probe force microscopy (KFM) and the crystal planes constituting GBs by transmission electron microscopy (TEM). By KFM measurements, it was found that the GBs in P-doped n-BaSi2 are different from those in undoped BaSi2; undoped n-BaSi2 has a downward band bending around the GBs with barrier heights of approximately 30 meV. In contrast, P-doped n-BaSi2 has an upward band bending with barrier heights of approximately 15 meV. TEM observation revealed that most of the GBs in P-doped BaSi2 are composed of BaSi2 (011)/(0-11) planes. This result is the same as that in undoped BaSi2. |
| Starting Page | 011403 |
| Ending Page | 011403 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| DOI | 10.7567/JJAPCP.3.011403 |
| Volume Number | 3 |
| Alternate Webpage(s) | https://journals.jsap.jp/wp-content/uploads/JJAPCP-3-011403.pdf |
| Alternate Webpage(s) | https://doi.org/10.7567/JJAPCP.3.011403 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
