Loading...
Please wait, while we are loading the content...
Similar Documents
Impact of Multi-Layered Gate Design on Hot Carrier Reliability of Gate Electrode Workfunction Engineered Recessed Channel ( GEWE-RC ) MOSFET
| Content Provider | Semantic Scholar |
|---|---|
| Author | Chaujar, Rishu Kaur, Ravneet Saxena, Manoj Raj Gupta, Mridula Gupta, R. S. |
| Copyright Year | 2008 |
| Abstract | The paper discusses hot carrier reliability assessment of Gate Electrode Workfunction Engineered Recessed Channel (GEWE-RC) MOSFET involving channel recession and gate electrode workfunction engineering integration onto the conventional MOSFET, using ATLAS device simulator. Further, the impact of gate stack architecture on the device reliability of GEWE-RC MOSFET is studied in terms of hot carrier behavior. TCAD simulations reveal reduction in the hot carrier reliability metrics such as electron velocity, electron temperature, conduction band offset, hot electron injected gate current and impact ionization substrate current. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://www.ursi.org/proceedings/procGA08/papers/DP1p10.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |