NDLI: Microstructural study of very low resistivity TiNx films formed by rapid thermal low-pressure metalorganic chemical vapour deposition on InP

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Microstructural study of very low resistivity TiNx films formed by rapid thermal low-pressure metalorganic chemical vapour deposition on InP

Content Provider	Semantic Scholar
Author	Katz, Avishay Feingold, A. H. Nakahara, Shohei Pearton, Stephen J. Lane, E. Jones, K. S.
Copyright Year	1993
Abstract	Significant reductions in sheet resistivity of TiNx films formed by rapid thermal low-pressure metalorganic chemical vapour deposition onto InP, were realized by increasing the substrate temperature through the deposition, utilizing a post-deposition, in situ, heat treatment at temperatures up to 600 degrees C, and adding tertiarybutylphosphine (TBP) metalorganic precursor to the reactive gas mixture. As a result, film resistivity values as low as 30 mu Omega cm were obtained. Extensive transmission electron microscopy analysis was performed and the formation of a new and unidentified phase, having a similar crystal structure and lattice constant to those of Li9TiN2O2, was identified. This phase was formed as a result of TiNx-P intermixing during high-temperature post-deposition sintering of the TiNx/InP system, or as a result of incorporating P in the deposited TiNx film by bleeding TBP. This phase formation is likely to be the origin of the observed reduction in film resistivity.
Starting Page	450
Ending Page	458
Page Count	9
File Format	PDF HTM / HTML
DOI	10.1088/0268-1242/8/3/026
Volume Number	8
Alternate Webpage(s)	http://swamp.mse.ufl.edu/articles/1993/Katz_1993_SST_8_450.pdf
Alternate Webpage(s)	https://doi.org/10.1088/0268-1242%2F8%2F3%2F026
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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