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Design of Reconfigurable Quad-band CMOS Class AB Power Amplifier employing MEMS Variable Capacitors in 0.18µm Technology
| Content Provider | Semantic Scholar |
|---|---|
| Author | Fall, Mansour Domingue, Frédéric Fouladi, Siamak Mansour, Raafat R. |
| Copyright Year | 2011 |
| Abstract | A reconfigurable quad-band CMOS power amplifier suitable for multi-band radiofrequency transceivers is presented. The multi-band power amplifier is a reconfigurable monolithic microwave integrated circuit designed to operate in 1.7, 1.8, 1.9 and 2.1 GHz frequency bands. The structure is a single ended one stage class AB power amplifier with tunable impedance matching network based on high Q micromachined inductors and MEMS tunable capacitors. The reconfigurable power amplifier is fully integrated in 0.18μm CMOS technology and achieves maximum output power with good efficiency over different operating frequencies. The device has a simulated maximum output power of 20 dBm and can achieve a variable gain over than 16 dB in the four operating bands with a power-added efficiency (PAE) better than 50%. Keywordsreconfigurable power amplifier; tunable impedance matching; RF microelectromechanical system (MEMS); CMOS-MEMS; variable capacitors |
| Starting Page | 34 |
| Ending Page | 37 |
| Page Count | 4 |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://www.thinkmind.org/download.php?articleid=cenics_2011_2_30_60054 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
