MOCVD growth of non-epitaxial and epitaxial ZnS thin films

Content Provider	Semantic Scholar
Author	Fang, J. Holloway, Paul H. Jones, Karen Sparck Pathangey, Balu Brettschneider, E. Anderson, Travis J.
Copyright Year	1993
Abstract	Thin films of ZnS have been deposited by MOCVD on both BaTa2O6/ITO/glass and Si substrates. Diethylzinc (DEZn) and H2S are used for deposition on substrates heated to the 250–400°C temperature range. The microstructure and properties of ZnS films were studied by X-ray diffractometry (XRD), ultraviolet/visible spectrophotometry (UVS) and scanning electron microscopy (SEM). Films prepared on BaTa2O6/ITO/glass were polycrystalline with mixed cubic and hexagonal phases. The hexagonal structure dominated for film thicknesses > 700 nm, while the cubic structure dominated for film thicknesses > 700 nm. The bandgap energy of ZnS films decreased and the surface morphology became worse with the increasing film thickness. Upon annealing 200–600 nm films at temperatures of 450–550°C in H2S for 1 h, the ZnS films developed an even stronger cubic (111) or hexagonal (002) preferred orientation. Polycrystalline ZnS films grown on Si(100) and (111) substrates tended to be cubic. Nucleation and growth rates on Si(100) substrates were initially faster than on Si(111) substrates. At 400°C, epitaxial growth of ZnS on Si(100) was achieved.
Starting Page	701
Ending Page	706
Page Count	6
File Format	PDF HTM / HTML
DOI	10.1016/0169-4332(93)90605-B
Alternate Webpage(s)	http://swamp.mse.ufl.edu/articles/1993/Fang_1993_ASS_70_701.pdf
Alternate Webpage(s)	https://doi.org/10.1016/0169-4332%2893%2990605-B
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article