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InGaAsP quantum-wells saturable absorber for diode-pumped passively Q-switched 1.3-μm lasers
| Content Provider | Semantic Scholar |
|---|---|
| Author | Su, Kuan-Wei Liao, Yi Lin Huang, S. C. Chen, Yung-Fu Huang, K. F. |
| Copyright Year | 2006 |
| Abstract | We demonstrate the first use of InGaAsP quantum wells as a saturable absorber in the Q-switching of a diode-pumped Nd-doped 1.3 μm laser. The barrier layers of the InGaAsP quantum-well device are designed to be a strong absorber for the suppression of the transition channel at 1.06 μm. With an incident pump power of 1.8 W, an average output power of 160 mW with a Q-switched pulse width of 19 ns at a pulse repetition rate of 38 kHz was obtained. |
| Starting Page | 429 |
| Ending Page | 431 |
| Page Count | 3 |
| File Format | PDF HTM / HTML |
| DOI | 10.1007/s00340-006-2247-5 |
| Volume Number | 84 |
| Alternate Webpage(s) | https://ir.nctu.edu.tw/bitstream/11536/11803/1/000239394200011.pdf |
| Alternate Webpage(s) | https://doi.org/10.1007/s00340-006-2247-5 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |