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The Effectof Li-Ion-Doped Porous MgO Film on Operational Memory Margin of ac-Plasma Display Panel
| Content Provider | Semantic Scholar |
|---|---|
| Author | Ahn, Sung Il Uchiike, Heiju Lee, Seong Eui Kim, Kwang-Ho Kwon, Sang Jik |
| Copyright Year | 2007 |
| Abstract | An ac-type plasma display panel (ac-PDP) made with Li-ion-doped MgO film formed using a sol–gel precursor is characterized and compared with an ac-type PDP with an MgO film formed by e-beam evaporation. The operational memory margin of a test panel with a pure MgO film formed using the printing method is very high due to the porous surface of the films. For a test panel with Li-ion-doped MgO, the operational margin decreases as the dopant concentration increases. The secondary electron emission from a pure printed MgO film is highly unstable because of the severe surface charging due to the porosity of the MgO films. The surface charging decreases linearly as the dopant concentration increases. This secondary electron emission (SEE) result implies that a linear relationship exists between the memory margin of an ac-PDP and the charging phenomenon of the MgO surface after the SEE. |
| Starting Page | 6022 |
| Ending Page | 6026 |
| Page Count | 5 |
| File Format | PDF HTM / HTML |
| DOI | 10.1143/JJAP.46.6022 |
| Volume Number | 46 |
| Alternate Webpage(s) | http://psec.uchicago.edu/Papers/JJAP-The_Effect_of_Li-Ion-Doped_Porous_MgO_Film_on_Operational_Memory_Margin_of_ac_Plasma_Display_0.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
