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Room-temperature optically-pumped GaSb quantum well based VCSEL monolithically grown on Si (100) substrate
| Content Provider | Semantic Scholar |
|---|---|
| Author | Balakrishnan, Ganesh Prasanna Huang, Steven He Khoshakhlagh, Arezou Jallipalli, Anitha Rotella, Paul Amtout, Abdenour Krishna, Sanjay Haines, Charles Dawson, Lawrence R. Huffaker, Diana L. |
| Copyright Year | 2005 |
| Abstract | Room-temperature optically-pumped In/sub 0.2/Ga/sub 0.8/Sb quantum well lasers on Si are reported. The defect-free monolithic epistructure growth on a Si(100) substrate is initiated by an AlSb quantum dot nucleation layer followed by an AlSb/GaSb superlattice. The 13% mismatch between the AlSb and Si lattice is accommodated by misfit dislocations and associated crystallographic undulations in the AlSb buffer. The nucleation layer and buffer are characterised by atomic force microscopy and transmission electron microscopy. The lasing spectrum is characterised as a function of pump power and polarisation analysis. |
| Starting Page | 350 |
| Ending Page | 352 |
| Page Count | 3 |
| File Format | PDF HTM / HTML |
| DOI | 10.1049/el:20064286 |
| Volume Number | 42 |
| Alternate Webpage(s) | http://www.chtm.unm.edu/publications/ELL000350.pdf |
| Alternate Webpage(s) | http://www.seas.ucla.edu/~huffaker/Documents/Room-temperature%20optically-pumped%20GaSb%20quantum%20well%20based%20VCSEL%20monolithically%20grown%20on%20Si%20(100)%20substrate.pdf |
| Alternate Webpage(s) | https://doi.org/10.1049/el%3A20064286 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
