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Stability of amorphous-silicon TFTs deposited on clear plastic substrates at 250/spl deg/C to 280/spl deg/ C
| Content Provider | Semantic Scholar |
|---|---|
| Author | Long, Ke Kattamis, A. Cheng, I.-C. Gleskova, Helena Wagner, S. Sturm, J. C. |
| Copyright Year | 2006 |
| Abstract | Amorphous-silicon (a-Si) thin-film transistors (TFTs) were fabricated on a free-standing new clear plastic substrate with high glass transition temperature (T/sub g/) of >315/spl deg/ C and low coefficient of thermal expansion of <10 ppm/ /spl deg/ C. Maximum process temperatures on the substrates were 250/spl deg/C and 280/spl deg/C, close to the temperatures used in industrial a-Si TFT production on glass substrates. The first TFTs made at 280/spl deg/C have dc characteristics comparable to TFTs made on glass. The stability of the 250/spl deg/C TFTs on clear plastic is approaching that of TFTs made on glass at 300/spl deg/C-350/spl deg/C. TFT characteristics and stability depend only on process temperature and not on substrate type. |
| Starting Page | 111 |
| Ending Page | 113 |
| Page Count | 3 |
| File Format | PDF HTM / HTML |
| DOI | 10.1109/LED.2005.863147 |
| Volume Number | 27 |
| Alternate Webpage(s) | http://www.princeton.edu/sturm/publications/journal-articles/JP.150.pdf |
| Alternate Webpage(s) | https://scholar.princeton.edu/sites/default/files/sturm/files/jp.150.pdf |
| Journal | IEEE Electron Device Letters |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
